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Lexar samples first 8Gb NAND Flash from Samsung
Dennis Hissink : December 31th 2003 - 03:59 CET
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 Lexar Media, Inc., a leading designer, developer and marketer of high-performance digital media and accessories, today announced that the company has begun sampling Samsung Electronics' first 8Gb NAND flash memory device. The new high-density chips, combined with Lexar Media's next-generation controller technology, will enable Lexar Media to increase the performance and storage capacity of its award winning memory cards and USB flash drives. "Photographers consistently demonstrate an insatiable appetite for fast, high-capacity digital storage and our close relationship with Samsung allows us to be the first to deliver it," said Eric Stang, chairman, president and CEO, Lexar Media.
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"Our collaboration with Samsung allows us to maximize the capabilities of their flash memory through advanced features programmed into our controller."
"Our 8Gbit quad-die NAND flash using single level cell (SLC) technology offers a superior, reliable high performance storage solution over substantially slower multi level cell (MLC) solutions," said Jon Kang, Senior Vice President of Samsung Electronics' memory product planning and application engineering team. "Our SLC technology is not only low cost but also performs ideally for high-end, high performance applications such as digital still and video cameras allowing consumers to take consecutive pictures more quickly and enabling continuous recording of high quality video."
Lexar Media's next generation technology will produce faster write speeds in high-density memory through more efficient operation. Historically, Lexar Media's proprietary and patented controller has allowed many sectors of flash memory to be programmed without any erase cycles, and erases blocks in the background when the system is idle for faster performance. Included in the new architecture are pipelining and streaming technology to enable smooth transfer of data without interruption, which further increases the speed at which data is written and read. |
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