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Samsung breaks density barrier with 8Gb NAND Flash
Dennis Hissink : December 18th 2003 - 00:02 CET
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SamsungSamsung Electronics has introduced the industry's first 8Gbit NAND flash memory device. The high density device will enable a new level of functionality in storage subsystem designs to meet fast growing demand for memory from products like digital cameras, USB Flash Drives, PDAs and MP3 players. "The 8Gbit NAND flash ships in an industry leading Quad Die Pack (QDP) and leverages Samsung's advanced 2Gb component technology and Single Level Cell (SLC) design," said Jon Kang, senior vice president of product planning and engineering at Samsung Electronics Corp. "The new NAND device takes advantage of the company's advanced manufacturing capabilities and is produced on 12-inch wafers in a 90nm process."
Samsung breaks density barrier with 8Gb NAND Flash"Mobile phones and converged handheld devices are continuing to add multimedia features like imaging, digital music, and even video," said Allen Leibovitch, Program Manager for Semiconductors at IDC, in Mountain View, Calif. NAND flash memory is growing in popularity as a high-density, lower-cost data storage solution for mobile devices, and board space in these designs, especially clamshell devices, is at a premium."

Mass production of Samsung's new 8Gbit NAND components is expected to begin in the first quarter of 2004.




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