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Seiko Epson flexible memory TFT SRAM
Jasper Huitink : October 5th 2005 - 22:20 CET
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EpsonEpson flexible memory TFT SRAM : Seiko Epson Corporation today announced that it had developed the first flexible SRAM (16 kilobits). The company expects the TFT-SRAM to be adopted in the near future as a key component for small, light and flexible electronic devices. Epson has developed a reputation for developing compact, energy-saving electronic devices. Using this experience and technical expertise, the company has now set itself the target of developing devices that are thin, light and flexible. To achieve this aim, Epson has developed technologies including low temperature poly-Si technology using thin film formation, and SUFTLA, which allows the transfer of TFT circuits from a glass substrate onto flexible substrates.
Seiko Epson flexible memory TFT SRAMEpson SRAM - Flexible technology
To develop the TFT-SRAM, Seiko Epson Corporation (“Epson”) used its technologies to integrate all the circuit blocks that make up the memory into a single chip on a plastic substrate. The result is a TFT SRAM (16 kilobits) that operates stably at high speed, and at low voltage. Epson Seiko Corporation is presently continuing its research in flexible electronic device technologies, in addition to searching for potential applications. Cameras and PDA’s are good options.

Seiko TFT SRAM - Working memory
The TFT-SRAM can be used as the working memory for "ACT11," Epson's previously announced original asynchronous 8-bit microprocessor. The company's researchers succeeded in running demo programs using the combination of TFT-SRAM and ACT11.

Seiko Epson SRAM - Features
• Real TFT-SRAM, with one cell consisting of six transistors
• Short access time is realized by integrating a sense amplifier onto a flexible substrate
• TFT-SRAM can be used as the working memory for ACT11

Flexible TFT SRAM - Specifications
• Memory size - 16 kbits
• Supply voltage - 3.0 V-6.0 V
• Feature size - 3 µm
• Memory cell type - 6 T
• Memory cell size - 68 µm x 47.5 µm
• Chip size - 10.77 mm x 8.28 mm
• Thickness - 200 µm

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