LG G6 review Samsung Galaxy S8 Apple iPhone X Samsung Galaxy Note 8 HTC U 11 Sony Xperia L1
LG G6 review Samsung Galaxy S8 Apple iPhone X Samsung Galaxy Note 8 HTC U 11 Sony Xperia L1
  2017 NEWS APPLE CANON FUJIFILM HTC HUAWEI LG MOTOROLA NIKON NINTENDO NOKIA OLYMPUS PANASONIC PENTAX SAMSUNG SONY  
Apple iPhone
 
     
Powered by True
Counted by OneStat.com
Dennis Hissink : July 20th 2003 - 11:04 CET

Toshiba and SanDisk announce new Flash development


Digital Review Test Appareil Photo Numerique Prueba camara digital Camera Review Dijital Kamera Incelemeleri Digitalkamera Test Digitalkamera
ToshibaToshiba Corporation and SanDisk Corporation (NASDAQ:SNDK) today announced development of a high density NAND flash memory cell structure that allows fabrication of 4-Gigabit (Gb) NAND flash memory using the 90-nanometer (nm) design rules. The new memory cell, has a physical cell area of only 0.041 micron squared, and supports scaling to future generations of smaller feature design rules. Toshiba and SanDisk have tested the new cell structure and demonstrated its performance and reliability. The two companies plan to employ the new NAND cell technology starting in the first half of 2004 with 2 and 4-Gigabit NAND flash memory chips that will be manufactured by their FlashVision Japan Joint Venture production facility located at Toshiba.
Toshiba and SanDisk are recognized technology innovators and market leaders in NAND flash memories—the highly versatile, non-volatile memory that continues to be designed into a diverse range of products, including digital still and video cameras, mobile phones and PDAs. Toshiba, a principal inventor of NAND flash memory, has consistently led the way in promoting advances in chip capacity, while SanDisk is a leader in flash data storage card products and a pioneer in high density flash MLC memory technology.

In the new NAND memory cell structure, the floating gate is completely self-aligned to the active area. This design characteristic supports scaling of the structure for fabrication beyond the 90nm design rule and is expected to provide a distinct advantage over the current NAND memory cell structure, where further scaling below 110 nanometers becomes difficult.

The new memory cell structure is designed to support both 2-Gigabit single-level cells (SLC) with an area per bit of 0.041 micron squared as well as 4-Gigabit multi-level cells (MLC), which effectively will have an area per bit of only 0.0205 micron square. The MLC structure allows each memory cell to carry 2 bits of information, instead of 1 bit, and minimizes interference. The larger capacity and low bit cost of MLC will allow Toshiba and SanDisk to reinforce their market leadership and advance their continuing collaboration in new technologies to meet increasing market demands for flash memory.




   SanDisk and Sony expand their MS cooperation
   SanDisk start selling MiniSD card in Japan
   Next  SanDisk agrees with Olympus for xD Picture card
   Previous  SanDisk and Sony expand their MS cooperation
   News by brand:Toshiba
   News by category:Memory card & Flash drive
   News by brand and category:Toshiba Memory card & Flash drive


Android smartphone
Latest Toshiba announcements
Toshiba notebooks with advanced docking solutions
Toshiba Portégé Convertible Notebook Series
Toshiba DynaPad Windows tablet
Toshiba Chromebook 2 with new Intel processor
Toshiba 4K Ultra HD Convertible Laptop
Toshiba Windows 10 tablets and Ultrabooks
16 Megapixel CMOS sensor for smartphones & tablets
Toshiba TransferJet adapter
Toshiba SDHC Memory Cards with NFC
Toshiba Canvio AeroCast Wireless HDD
Toshiba Wireless SSD
Toshiba Storage products strategy
Toshiba 7-inch Windows tablet
Toshiba image sensor strategy
Toshiba Chromebook 2
 
Latest news headlines
BlackBerry smartphone with keyboard surfaces
Nintendo 3DS XL SNES Classic edition
Apple Pay Cash coming to Europe
Dutch startup will change Li-Ion battery industry
Popular holiday toys in 2017
Huawei Mate 10 Pro specs surface
Samsung Premier Cinema LED screen
Panasonic Lumix GH5 review with firmware v2.0
Sony PlayStation VR headset released
Huawei EnVizion 360 VR Camera
New BlackBerry phone coming up
Honor 6C Pro surfaces
Huawei Pay mobile payment service for United States
Full-grain leather iPhone X cases from Dutch vendor
GoPro Fusion 360 degree camera to launch at CES 2018
   
  5G Accessories Android Galaxy iPhone Rumors Premium smartphones Camera Camera test Nikon SLR Underwater photography   CES CeBIT IFA Photokina PMA