Samsung NX500 Sony CyberShot HX90 Canon PowerShot G3 X Panasonic DMC-FZ330 Nikon Coolpix P900 Olympus Stylus 1s
Samsung NX500 Sony CyberShot HX90 Canon PowerShot G3 X Panasonic DMC-FZ330 Nikon Coolpix P900 Olympus Stylus 1s
  News Headlines APPLE CANON FUJIFILM HTC HUAWEI LG MICROSOFT NIKON OLYMPUS PANASONIC PENTAX SAMSUNG SONY  
Lets Go Digital
 
     
Powered by True
Counted by OneStat.com
Toshiba and SanDisk announce new Flash development
Dennis Hissink : July 20th 2003 - 11:04 CET
Digital Camera Review Test Appareil Photo Numerique Prueba camara digital Digitale Camera Test Dijital Kamera Incelemeleri Digitalkamera Test Digitalkamera
ToshibaToshiba Corporation and SanDisk Corporation (NASDAQ:SNDK) today announced development of a high density NAND flash memory cell structure that allows fabrication of 4-Gigabit (Gb) NAND flash memory using the 90-nanometer (nm) design rules. The new memory cell, has a physical cell area of only 0.041 micron squared, and supports scaling to future generations of smaller feature design rules. Toshiba and SanDisk have tested the new cell structure and demonstrated its performance and reliability. The two companies plan to employ the new NAND cell technology starting in the first half of 2004 with 2 and 4-Gigabit NAND flash memory chips that will be manufactured by their FlashVision Japan Joint Venture production facility located at Toshiba.
Toshiba and SanDisk are recognized technology innovators and market leaders in NAND flash memories—the highly versatile, non-volatile memory that continues to be designed into a diverse range of products, including digital still and video cameras, mobile phones and PDAs. Toshiba, a principal inventor of NAND flash memory, has consistently led the way in promoting advances in chip capacity, while SanDisk is a leader in flash data storage card products and a pioneer in high density flash MLC memory technology.

In the new NAND memory cell structure, the floating gate is completely self-aligned to the active area. This design characteristic supports scaling of the structure for fabrication beyond the 90nm design rule and is expected to provide a distinct advantage over the current NAND memory cell structure, where further scaling below 110 nanometers becomes difficult.

The new memory cell structure is designed to support both 2-Gigabit single-level cells (SLC) with an area per bit of 0.041 micron squared as well as 4-Gigabit multi-level cells (MLC), which effectively will have an area per bit of only 0.0205 micron square. The MLC structure allows each memory cell to carry 2 bits of information, instead of 1 bit, and minimizes interference. The larger capacity and low bit cost of MLC will allow Toshiba and SanDisk to reinforce their market leadership and advance their continuing collaboration in new technologies to meet increasing market demands for flash memory.




   SanDisk and Sony expand their MS cooperation
   SanDisk start selling MiniSD card in Japan
   Next  SanDisk agrees with Olympus for xD Picture card
   Previous  SanDisk and Sony expand their MS cooperation
   News by brand:Toshiba
   News by category:Flash memory
   News by brand and category:Toshiba Flash memory


LetsGoDigital digital camera magazine
Latest Toshiba announcements
Toshiba Chromebook 2 with new Intel processor
Toshiba 4K Ultra HD Convertible Laptop
Toshiba Windows 10 tablets and Ultrabooks
16 Megapixel CMOS sensor for smartphones & tablets
Toshiba TransferJet adapter
Toshiba SDHC Memory Cards with NFC
Toshiba Canvio AeroCast Wireless HDD
Toshiba Wireless SSD
Toshiba Storage products strategy
Toshiba 7-inch Windows tablet
Toshiba image sensor strategy
Toshiba Chromebook 2
Toshiba Tecra C50 laptop
Toshiba USB 3.0 drive
Toshiba Ultra HD TVs
 
Twitter LetsGoDigital
Latest news headlines
Samsung CES 2017 Innovation Awards
CES 2017 Show security measures
Indiegogo campaign: Android smartphone camera
Amazfit Pace GPS running watch
Target Cyber Week with 15 percent discount
2017 CES Keynote speakers
Why smartphones will never replace cameras
T-Mobile becomes ultimate giving machine
Sprint Black Friday offers
ZTE Grand X 4 Android smartphone
U.S. Cellular Black Friday deals
Newegg Black Friday and Cyber Monday deals
Matrix smartwatch with thermoelectric technology
Panasonic high-volume production scanner
CES 2017 Keynote with Qualcomm CEO
   
CanonCasioFujifilmNikonOlympusHTCSamsungSonyPanasonicNokia
  Accessories Android Apps Camcorders Digital cameras Mobile phones Smartphones Software Tablets   CES CeBIT Gadgets IFA Photokina PMA