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NAND Flash Memory Fabrication Facility
Mark Peters : July 12th 2011 - 12:10 CET
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SanDiskToshiba and SanDisk 300mm NAND Flash Memory facility : Toshiba and SanDisk Celebrate the opening of Fab 5 300mm NAND Flash Memory Fabrication Facility in Japan. Consumer demand for Smartphones, Tablets and other consumer electronic devices continues to fuel strong global demand for NAND flash memory. Toshiba began the construction of Fab 5 in July 2010, and the new facility, equipped with manufacturing equipment funded by Toshiba and SanDisk, started volume production in July 2011. Fab 5 currently uses 24 nanometer process technology and its first wafer outs will be in August 2011.
Nand flash memory

NAND Flash Memory Fabrication
In time, the NAND Flash Memory fab will transition to more advanced process generations, starting with recently announced 19nm technology, the world's smallest, most advanced process node. NAND Flash memory Fab 5 incorporates advanced earthquake-absorbing structures and integrates multiple power compensation techniques for protection against unexpected disruptions.

Flash memory facility

Toshiba and SanDisk 300mm NAND Flash Memory facility
LED lighting and power-saving manufacturing equipment will support the Nand Flash Memory fab in securing Toshiba's goal of 12% less CO2 emissions than Fab 4. A wafer transportation system links the facility with Fabs 3 and 4 to support efficient manufacturing. Flash Forward Ltd is a joint venture between Toshiba and SanDisk established in September 2010 (50.1 percent owned by Toshiba and 49.9 percent by SanDisk), funded the advanced manufacturing equipment within the NAND Flash Memory fab.
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