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Samsung 16 chip multi stack package technology

Nic Rossmüller : 2006-11-12 20:58:00
Samsung 16 chip multi stack package technology : Samsung, the world leader in advanced memory technology, announced that it has developed the industry’s first process to enable innovative production of a 16-chip multi-chip package (MCP) of memory. The new MCP technology supports the industry-wide demand for small form factors and high-densities that will accommodate multimedia-intensive user applications. Samsung’s new 16-chip MCP technology, when applied to 8Gb NAND flash chips, can enable up to a 16 gigabyte (GB) MCP solution. Advanced multi-chip package technology requires a combination of key processes such as wafer thinning technology, redistribution layer technology, chip sawing technology and wire bonding technology.


Samsung 50nm DRAM Memory Chip

Nic Rossmüller : 2006-10-29 19:00:00
Samsung 50nm DRAM Memory Chip : Samsung Electronics announced that it has developed the industry’s first 50-nanometer DDR2 DRAM chip, which will increase production efficiency from the 60nm level by 55 percent. The new 1-gigabit DRAM incorporates advanced technologies such as three-dimensional transistor design and multi-layered dielectric technology, which greatly enhance performance and data storage capabilities. “With the 50nm DRAM development, we’re continuing our technology leadership, paving the way for our customers to reap not only greater cost efficiencies but also to make superior products,” said Nam Yong Cho, executive vice president of memory sales & marketing at Samsung Electronics’ Semiconductor business.


Samsung 40nm NAND flash & PRAM memory

Ilse Jurriën : 2006-09-13 22:08:00
Samsung 40nm NAND flash & PRAM memory : Samsung Electronics Co., the world leader in advanced semiconductor technology solutions, announced major component technology advancements including the 40-nanometer (nm) 32-Gigabit (Gb) NAND flash, the first prototype of the next-generation of memory PRAM (Phase-change Random Access Memory), and a new System-on-Chip controller for the soon-to-be-released Hybrid Hard Disk Drive. “The phenomenal shift in the popularity of digital products that we are experiencing today is rooted in the virtually non-stop string of advances being seen in semiconductor technology,” said Dr. Chang Gyu Hwang, president and CEO of Samsung Electronics’ at its sixth annual press conference held at the Shilla Hotel.


Samsung high-capacity Nand solution

Ilse Jurriën : 2006-09-13 22:08:00
Samsung high-capacity Nand solution : Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it is now shipping 1 and 2 gigabyte samples of moviNand - an embedded combination of Nand flash memory, a multimedia card (MMC) controller and onboard firmware - to leading manufacturers of mobile products. “moviNand solves a dilemma faced by many of our mobile customers – how to put a large amount of Nand flash in a small space behind a standardized, high speed serial interface,” said Don Barnetson, Director, Flash Marketing, Samsung Semiconductor. MoviNand satisfies all of the concerns of mobile device designers with its high-speed, high capacity and extremely small form factor.


Samsung PRAM memory

Ilse Jurriën : 2006-09-13 21:10:00
Samsung PRAM memory : Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, announced that it has completed the first working prototype of what is expected to be the main memory device to replace high density NOR flash within the next decade a Phase-change Random Access Memory (PRAM). The company unveiled the 512Megabit (Mb) device at its sixth annual press conference in Seoul today. More scalable than any other memory architecture being researched, PRAM features the fast processing speed of RAM for its operating functions combined with the non-volatile features of flash memory for storage, giving it the nickname: perfect RAM.


Samsung 64GB flash memory

Dennis Hissink : 2006-09-11 19:40:04
Samsung 64GB flash memory : Samsung Electronics announced that it has developed the industry’s first 40-nanometer (nm) memory device. The Samsung 32 Gigabit (Gb) NAND flash device is the first memory to incorporate a Charge Trap Flash (CTF) architecture, a revolutionary new approach to further increase manufacturing efficiency while greatly improving performance. The new CTF-based NAND 32GB flash memory increases the reliability of the memory by sharply reducing inter-cell noise levels. Its surprisingly simple structure also enables higher scalability which will eventually improve manufacturing process technology from 40 nm to 30 and even 20nm. The 32Gb CTF memory was announced at the sixth annual Samsung press conference in Seoul.


MMC Flash Memory cards from Samsung

Nic Rossmüller : 2006-08-01 12:08:00
MMC Flash Memory cards from Samsung : Samsung Electronics Co., Ltd., announced today that it has developed the industry's highest density MMC card (popular removable MultiMediaCard for portable electronics) based on its most advanced MLC NAND flash memory. It also has developed the highest performing MMC card, based on SLC NAND flash, in rounding out its large portfolio of MMC memories. With added density and higher performance, the new Samsung MMCplus cards are designed to greatly enhance user convenience for a variety of applications. Based on Samsung's 8-gigabit (Gb) NAND memory, the MMCplus card will be introduced with an 8-gigabyte (GB) density, allowing it to store 2,000 MP3 music files or eight hours of DVD-quality movies.


Samsung 8GB NAND flash memory

Nic Rossmüller : 2006-07-27 17:40:00
Samsung 8GB NAND flash memory : Samsung Electronics Co., Ltd., today announced that it has begun mass producing an 8GB NAND flash memory device, providing a much larger and more affordable storage density for consumer and mobile applications such as mobile phones, MP3 players and gaming consoles. The high-density MLC memory is being produced with 60-nanometer (nm) process technology, the smallest used today. Samsung's 8Gb NAND flash memory, developed in September 2004, is the fifth consecutive Samsung NAND flash memory to follow the New Memory Growth Model of double density growth every 12 months, a pattern conceived by Dr. Chang Gyu Hwang, president and CEO of Samsung Electronics Semiconductor Business.






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