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Flash memory (3)
Innovations (1)
Mobile Imaging (3)
New camcorders (3)
New digital cameras (14)


Samsung develops new Memory Card for Mobile phones

Dennis Hissink : 2004-12-13 08:15:16
Samsung announced today that it has developed an extremely small, low-power multimedia memory card (MMC) for mobile phones. The Samsung MMCmicro memory card has been designed to overcome a major hurdle in cell phone design -- achieving high performance with a low-power, removable memory card, now smaller than the size of a thumbnail. With dimensions of only 12x14x1.1mm, Samsung's new "MMCmicro" device is one-third the size of today's common reduced-size multimedia cards (RS-MMC). Samsung said that the design of its low-power card makes it easy to incorporate removable memory into progressively smaller mobile phones. Each card can operate on 1.8 or 3.3 volts of power.


Samsung unveils Ultra-Fast 1-Gigabit OneNAND Flash

Dennis Hissink : 2004-11-11 11:41:52
Samsung Electronics Co., Ltd., the leader in advanced semiconductor technology, today announced the successful development of a 1Gigabit (Gb) OneNAND(TM) Flash memory device utilizing Samsung's advanced 90nm process technology. By introducing this high density OneNAND Flash memory device, Samsung expands its diverse portfolio of flash technology to fully support the advanced multimedia features associated with next generation handsets and other mobile applications. Samsung's OneNAND device, providing a new Unified Storage concept, combines the high-speed data read function of NOR flash and the advanced data storage of NAND flash. The single chip is based on NAND architecture integrating buffer memory and logic interface.


Samsung introduces 8-Gigabit NAND flash memory

Dennis Hissink : 2004-09-21 14:15:51
Samsung Electronics Co., Ltd., the leader in advanced semiconductor technology, announced that it has developed the industry's first 60-nanometer (nm) 8-Gigabit (Gb) NAND Flash memory device for data storage medium such as low density mobile hard disks for mobile appliances. "NAND flash technology development continues to double density growth on an average of every 12 months," said Dr. Chang Gyu Hwang, president and CEO of Samsung Electronics' Semiconductor business. Verifying the New Memory Growth Model he first presented at the ISSCC's 2001conference, Dr. Hwang said the industry has seen densities grow from 256 Megabit (Mb) in 1999, to 512Mb in 2000, 1Gb in 2001, 2Gb in 2002, 4Gb in 2003 and now 8Gb in 2004"






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