Toshiba Corporation and SanDisk Corporation (NASDAQ:SNDK) today announced development of a high density NAND flash memory cell structure that allows fabrication of 4-Gigabit (Gb) NAND flash memory using the 90-nanometer (nm) design rules. The new memory cell, has a physical cell area of only 0.041 micron squared, and supports scaling to future generations of smaller feature design rules. Toshiba and SanDisk have tested the new cell structure and demonstrated its performance and reliability. The two companies plan to employ the new NAND cell technology starting in the first half of 2004 with 2 and 4-Gigabit NAND flash memory chips that will be manufactured by their FlashVision Japan Joint Venture production facility located at Toshiba.
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